? rcr15 40esj 1 / 5 ykkjpd-v3.1 p-channel enhancement mode field effect transistor z features z p i n configur ations v ds (v) = -20v,i d = -4a r ds(o n) <5 5m ? @ v gs = -4.5v r ds(o n) <6 3m ? @ v gs = -2.5v r ds(o n) <8 3m ? @ v gs = -1.8v so t 23-3l pack age es d protected: 3000v hbm z gener a l descr i ption the rcr1540 e s j uses adv anc ed trench technology to provide ex cellent r ds(o n) , low gate charge and o peration w i th gate voltages as low as 1 . 8v. this de vic e is s uitable for use as a load sw itch or in pwm app lications. z package information z absolute ma xim u m ratings @t a =25 unless other wise noted parameter sy mbol ratings unit drain-source voltage v ds -20 v gate-source voltage v gs 8 v http://
? rcr15 40esj 2 / 5 ykkjpd-v3.1 t a =25c -4 drain current (continuous) t a =70 c i d -3.2 a drain current (pulse) i dm -30 a power dissipation t a =25c p d 1.4 w operating temperature/ storage temperature t j/ /t stg -55~150 z electrical ch aracteristics @t a = 25 unl ess other w is e noted parameter sy mbol test c onditio n s min ty p max unit on /off ch a r a c te r i stics drain-source breakdown voltage v (br)dss v gs = 0v, i d = -250 a -20 -- -- v zero gate voltage drain current i dss v ds = -16 v , v gs = 0v -- -- -1 a gate threshold voltage v gs(th) v gs =v ds , i ds =-250 a -0.3 -0.65 -1 v gate leakage current i gss v gs = 8v , v ds =0v -- -- 10 a v gs = -4.5v , i d = -4a -- 50 55 m
v gs = -2.5v , i d = -4a -- 59 63 m
drain- source o n-state resista nce r ds( on) v gs = -1.8v , i d = -2a -- 74 83 m
forward transconductance g fs v ds = -5v , i d = -4a 8 16 -- s dio de forw ard voltag e v sd i sd = -1a , v gs = 0v -- -0.81 -1.0 v max i mum body -dio de co ntinuo us current i s -- -- -2.2 a switching characteristics total gate charge q g -- 4.59 5.97 nc gate-source charge q gs -- 2.14 2.78 nc gate-drain charge q gd v ds = -10v, i d = -4a v gs = -4.5v -- 2.51 3.26 nc turn-on delay time t d ( on ) -- 965.2 1930.4 ns turn-on rise time t r -- 1604 3208 ns turn-off delay time t d( off ) -- 7716 15432 ns turn-off fall time t f v dd = -10v, r l =2 .5 i d = -4a, v ge n = -4.5v r g = 3 -- 3452 6904 ns dynamic characteristics input capacitance c iss -- 36.45 -- pf output capacitance c oss -- 128.57 -- pf reverse transfer capacitance c rss v gs =0 v , v ds = -1 0v f= 1.0mhz -- 15.17 -- pf notes: 1. pulse w i dth limited by ma x i mum junctio n temperature. 2. p u l s e test: p w 300 s, duty c y cle 2%. 3. for design ai d only , not s ubject to production testing. 4. switching time is essentially independent of operating temperature.
? rcr15 40esj 3 / 5 ykkjpd-v3.1 z typical performance characteristics
? rcr15 40esj 4 / 5 ykkjpd-v3.1
? rcr15 40esj 5 / 5 ykkjpd-v3.1 disclaim er yukun semiconductor rese rves the right to make c hanges without f urthe r notice to any pr od ucts herein to im prove reli ability, fu ncti o n o r design. yu ku n d o es not assume any liability arising out of the application or use of any product or cir cuit de scribe d h e rein; ne ither doe s it conv ey any li cen c e u n d er its p a ten t righ ts, no r the rig h ts of othe rs.
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